Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin; Y. K. Su; H. T. Huang; S. J. Chang; G. S. Chen; T. P. Sun; J. J. Luo

doi:10.1109/68.491592

Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D₂) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 10¹⁰ cm^-2.

原文	English
頁（從 - 到）	676-678
頁數	3
期刊	IEEE Photonics Technology Letters
卷	8
發行號	5
DOIs	https://doi.org/10.1109/68.491592
出版狀態	Published - 1996 5月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

存取文件

10.1109/68.491592

其它文件與鏈接

引用此

@article{48b8b47d9204416ea16054a1913270dd,

title = "Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes",

abstract = "A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.",

author = "Lin, {C. T.} and Su, {Y. K.} and Huang, {H. T.} and Chang, {S. J.} and Chen, {G. S.} and Sun, {T. P.} and Luo, {J. J.}",

note = "Funding Information: Manuscript received November 6, 1995; revised January 16, 1996. This work was supported by the Chung Institute of Science and Technology under Contract CS 84-0210-D-006-007 and National Science Council, Republic of China, under Contract NSC.84-2215-E-006-002. C. T. Lin, Y. K. Su, H. T. Huang, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. G. S. Chen, T. P. Sun, and J. J. Luo are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan, R.O.C. Publisher Item Identifier S 1041-11 35(96)03596-3.",

year = "1996",

month = may,

doi = "10.1109/68.491592",

language = "English",

volume = "8",

pages = "676--678",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

AU - Lin, C. T.

AU - Su, Y. K.

AU - Huang, H. T.

AU - Chang, S. J.

AU - Chen, G. S.

AU - Sun, T. P.

AU - Luo, J. J.

N1 - Funding Information: Manuscript received November 6, 1995; revised January 16, 1996. This work was supported by the Chung Institute of Science and Technology under Contract CS 84-0210-D-006-007 and National Science Council, Republic of China, under Contract NSC.84-2215-E-006-002. C. T. Lin, Y. K. Su, H. T. Huang, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. G. S. Chen, T. P. Sun, and J. J. Luo are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan, R.O.C. Publisher Item Identifier S 1041-11 35(96)03596-3.

PY - 1996/5

Y1 - 1996/5

N2 - A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

AB - A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0030150117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030150117&partnerID=8YFLogxK

U2 - 10.1109/68.491592

DO - 10.1109/68.491592

M3 - Article

AN - SCOPUS:0030150117

VL - 8

SP - 676

EP - 678

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 5

ER -

Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此