摘要
A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.
原文 | English |
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頁(從 - 到) | 676-678 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 8 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1996 五月 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering