Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

原文English
頁(從 - 到)676-678
頁數3
期刊IEEE Photonics Technology Letters
8
發行號5
DOIs
出版狀態Published - 1996 五月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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