Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin; Y. K. Su; H. T. Huang; S. J. Chang; G. S. Chen; T. P. Sun; J. J. Luo

doi:10.1109/68.491592

Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

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22 引文斯高帕斯（Scopus）

摘要

A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D₂) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 10¹⁰ cm^-2.

原文	English
頁（從 - 到）	676-678
頁數	3
期刊	IEEE Photonics Technology Letters
卷	8
發行號	5
DOIs	https://doi.org/10.1109/68.491592
出版狀態	Published - 1996 五月

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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abstract = "A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.",

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note = "Funding Information: Manuscript received November 6, 1995; revised January 16, 1996. This work was supported by the Chung Institute of Science and Technology under Contract CS 84-0210-D-006-007 and National Science Council, Republic of China, under Contract NSC.84-2215-E-006-002. C. T. Lin, Y. K. Su, H. T. Huang, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. G. S. Chen, T. P. Sun, and J. J. Luo are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan, R.O.C. Publisher Item Identifier S 1041-11 35(96)03596-3.",

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AU - Chen, G. S.

AU - Sun, T. P.

AU - Luo, J. J.

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