Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric

Zhen Cheng Wu, Chau Chiung Wang, Ren Guay Wu, Yu Lin Liu, Peng Sen Chen, Zhe Min Zhu, Mao Chieh Chen, Jiann Fu Chen, Chung I. Chang, Lai Juh Chen

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

This work investigates the integration of very thin sputtered Ta and reactively sputtered TaN barriers with Cu and a low-dielectric-constant (low-K) layer of poly(arylene ether) (PAE-2). It is found that Cu readily penetrates into PAE-2 and degrades its dielectric strength in metal-insulator semiconductor capacitors of Cu/PAE-2/Si structure at temperatures as low as 200 °C. Very thin Ta and TaN films of 25 nm thickness sandwiched between Cu and the low-K dielectric served as effective barriers during a 30 min thermal annealing at temperatures up to 400 and 450 °C, respectively. We propose a failure mechanism of outgassing induced gaseous stress of PAE-2 under the Ta film to explain its premature barrier degradation. The TaN barrier did not suffer from this gaseous stress problem because of its stronger adhesion to PAE-2 than that of Ta to PAE-2, leading to a better long-term reliability.

原文English
頁(從 - 到)4290-4297
頁數8
期刊Journal of the Electrochemical Society
146
發行號11
DOIs
出版狀態Published - 1999 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 材料化學
  • 表面、塗料和薄膜
  • 電化學
  • 可再生能源、永續發展與環境

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