Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang; En Xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Emil B. Song; Sung Min Kim; Kang L. Wang; Kosmas Galatsis

doi:10.1109/TNS.2012.2224135

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Emil B. Song, Sung Min Kim, Kang L. Wang, Kosmas Galatsis

電機資訊學院

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

原文	English
頁（從 - 到）	2974-2978
頁數	5
期刊	IEEE Transactions on Nuclear Science
卷	59
發行號	6
DOIs	https://doi.org/10.1109/TNS.2012.2224135
出版狀態	Published - 2012 12月

All Science Journal Classification (ASJC) codes

核能與高能物理
核能與工程
電氣與電子工程

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10.1109/TNS.2012.2224135

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abstract = "Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.",

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AU - Zhang, Cher Xuan

AU - Zhang, En Xia

AU - Fleetwood, Daniel M.

AU - Alles, Michael L.

AU - Schrimpf, Ronald D.

AU - Song, Emil B.

AU - Kim, Sung Min

AU - Wang, Kang L.

AU - Galatsis, Kosmas

PY - 2012/12

Y1 - 2012/12

N2 - Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

AB - Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

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Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

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