Electrical transport and electronic properties of multiband metallic PdSn2

C. C. Chang, C. E. Hsu, J. Y. Haung, T. C. Liu, C. M. Cheng, W. T. Chen, P. Y. Cheng, C. N. Kuo, C. S. Lue, C. C. Lee, C. L. Huang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report the electronic properties of the metallic PdSn2 single crystals by means of electrical resistivity, Hall effect, angle-resolved photoemission spectroscopy (ARPES) measurements and band-structure calculations. A simultaneous two-band analysis is conducted on magnetoresistance (MR) and Hall effect data, revealing hole-carrier dominated transport behavior. ARPES results clearly indicate the multiband nature of PdSn2 with the presence of shallow hole and electron pockets at the Fermi level, supported by first-principles calculations. From the MR data, a breakdown of Kohler's rule in the 300-80 K range is observed. We consider a possible explanation for this phenomenon, which is associated with the temperature-induced band shift near the Fermi surface.

原文English
文章編號205133
期刊Physical Review B
108
發行號20
DOIs
出版狀態Published - 2023 11月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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