@inproceedings{0291fe00b8514a27a8f2f4b730dce9d7,
title = "Electro-optical modulator based on the p+-n+-n + transistor structure integrated on SOI substrate",
abstract = "We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.",
author = "Chuang, {Ricky W.} and Hsu, {Mao Teng} and Chou, {Shen Horng}",
year = "2011",
doi = "10.1364/cleo_at.2011.jtui5",
language = "English",
isbn = "9781557529107",
series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",
publisher = "IEEE Computer Society",
booktitle = "2011 Conference on Lasers and Electro-Optics",
address = "United States",
}