Electro-optical modulator based on the p+-n+-n + transistor structure integrated on SOI substrate

Ricky W. Chuang, Mao Teng Hsu, Shen Horng Chou

研究成果: Conference contribution

摘要

We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

原文English
主出版物標題2011 Conference on Lasers and Electro-Optics
主出版物子標題Laser Science to Photonic Applications, CLEO 2011
出版狀態Published - 2011 九月 1
事件2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
持續時間: 2011 五月 12011 五月 6

出版系列

名字2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Other

Other2011 Conference on Lasers and Electro-Optics, CLEO 2011
國家/地區United States
城市Baltimore, MD
期間11-05-0111-05-06

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學

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