We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.
|主出版物標題||Quantum Electronics and Laser Science Conference, QELS 2011|
|出版狀態||Published - 2011|
|事件||Quantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States|
持續時間: 2011 五月 1 → 2011 五月 6
|Other||Quantum Electronics and Laser Science Conference, QELS 2011|
|期間||11-05-01 → 11-05-06|
All Science Journal Classification (ASJC) codes