Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

C. P. Chang, Yan Ten Lu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.

原文English
頁(從 - 到)949-953
頁數5
期刊Solid State Communications
89
發行號11
DOIs
出版狀態Published - 1994 三月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

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