TY - JOUR
T1 - Electroabsorption of thin AlAs/GaAs quantum well
T2 - Effect of Γ-X valley mixing
AU - Chang, C. P.
AU - Lu, Yan Ten
N1 - Funding Information:
Acknowledgement - We would like to thank the Taiwan National Science Council for supporting this work under contract number NSC82-0208-M006-020.
PY - 1994/3
Y1 - 1994/3
N2 - We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.
AB - We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.
UR - https://www.scopus.com/pages/publications/0028396424
UR - https://www.scopus.com/pages/publications/0028396424#tab=citedBy
U2 - 10.1016/0038-1098(94)90358-1
DO - 10.1016/0038-1098(94)90358-1
M3 - Article
AN - SCOPUS:0028396424
SN - 0038-1098
VL - 89
SP - 949
EP - 953
JO - Solid State Communications
JF - Solid State Communications
IS - 11
ER -