Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node

Chia Lin Hsu, Dung Ching Perng, Yen Ming Chen, Shu Min Huang, Yu Ting Li, Chang Hung Kung, Chih Hsun Lin, Yu Ru Yang, Chin Fu Lin, Climbing Huang, J. Y. Wu

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Tungsten missing was observed at the interface between contact barrier layer and W in the 28 nm node contact process. The potentiodynamic polarization scans showed that H 2O 2 in the W chemical-mechanical- polishing slurry increased the potential difference between the diborane (B 2H 6) reduced atomic layer deposited (ALD) W and TiN, suggesting that there is a high tendency for galvanic corrosion to occur. This potential difference kept constant, but the corrosion current density increased when the H 2O 2 concentration increased. The TEM image showed the depth of ALD W missing is proportional to the H 2O 2 concentration, which agrees with the electrochemical testing results. ALD W films with various pre- and post-treatments and their correlations with the degree of W missing were also investigated.

原文English
頁(從 - 到)H162-H165
期刊Journal of the Electrochemical Society
159
發行號2
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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