Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou; Chih Hung Wu; Shoou Jinn Chang

doi:10.1109/LED.2014.2385865

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou
, Chih Hung Wu
, Shoou Jinn Chang

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO₃/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm², it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

原文	English
文章編號	6998011
頁（從 - 到）	207-209
頁數	3
期刊	IEEE Electron Device Letters
卷	36
發行號	2
DOIs	https://doi.org/10.1109/LED.2014.2385865
出版狀態	Published - 2015 2月 1

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All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2014.2385865

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title = "Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell",

abstract = "We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05\% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73\%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.",

author = "Hou, \{Jei Li\} and Wu, \{Chih Hung\} and Chang, \{Shoou Jinn\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

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doi = "10.1109/LED.2014.2385865",

language = "English",

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TY - JOUR

T1 - Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

AU - Hou, Jei Li

AU - Wu, Chih Hung

AU - Chang, Shoou Jinn

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Y1 - 2015/2/1

N2 - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

AB - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

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