Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

Hsueh Pin Lin, Xuan Jun Lin, Dung Ching Perng

研究成果: Article

4 引文 (Scopus)

摘要

This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

原文English
文章編號021107
期刊Applied Physics Letters
112
發行號2
DOIs
出版狀態Published - 2018 一月 8

指紋

photometers
absorbers
metals
rejection
quantum efficiency
illumination
electrolytes
broadband
copper

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

@article{9f870b02ffad469c8ed78ac021c45589,
title = "Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector",
abstract = "This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104{\%}. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.",
author = "Lin, {Hsueh Pin} and Lin, {Xuan Jun} and Perng, {Dung Ching}",
year = "2018",
month = "1",
day = "8",
doi = "10.1063/1.5010772",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector. / Lin, Hsueh Pin; Lin, Xuan Jun; Perng, Dung Ching.

於: Applied Physics Letters, 卷 112, 編號 2, 021107, 08.01.2018.

研究成果: Article

TY - JOUR

T1 - Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

AU - Lin, Hsueh Pin

AU - Lin, Xuan Jun

AU - Perng, Dung Ching

PY - 2018/1/8

Y1 - 2018/1/8

N2 - This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

AB - This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

UR - http://www.scopus.com/inward/record.url?scp=85040638196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040638196&partnerID=8YFLogxK

U2 - 10.1063/1.5010772

DO - 10.1063/1.5010772

M3 - Article

AN - SCOPUS:85040638196

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 021107

ER -