Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

Hsueh Pin Lin; Xuan Jun Lin; Dung Ching Perng

doi:10.1063/1.5010772

Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

Hsueh Pin Lin
, Xuan Jun Lin
, Dung Ching Perng

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 10⁴%. Furthermore, the DUV-to-visible rejection ratio (R_{300 nm}/R_{400 nm}) of ∼10³ was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

原文	English
文章編號	021107
期刊	Applied Physics Letters
卷	112
發行號	2
DOIs	https://doi.org/10.1063/1.5010772
出版狀態	Published - 2018 1月 8

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.5010772

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title = "Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector",

abstract = "This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104\%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.",

author = "Lin, \{Hsueh Pin\} and Lin, \{Xuan Jun\} and Perng, \{Dung Ching\}",

note = "Funding Information: The authors would like to thank Taiwan{\textquoteright}s Ministry of Science and Technology for the financial support under Grant No. MOST 105-2221-E-006-210 and MOST 106-2221-E-006-165. Funding Information: The authors would like to thank Taiwan's Ministry of Science and Technology for the financial support under Grant No. MOST 105-2221-E-006-210 and MOST 106-2221-E-006-165. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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doi = "10.1063/1.5010772",

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AU - Lin, Hsueh Pin

AU - Lin, Xuan Jun

AU - Perng, Dung Ching

N1 - Funding Information: The authors would like to thank Taiwan’s Ministry of Science and Technology for the financial support under Grant No. MOST 105-2221-E-006-210 and MOST 106-2221-E-006-165. Funding Information: The authors would like to thank Taiwan's Ministry of Science and Technology for the financial support under Grant No. MOST 105-2221-E-006-210 and MOST 106-2221-E-006-165. Publisher Copyright: © 2018 Author(s).

PY - 2018/1/8

Y1 - 2018/1/8

N2 - This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

AB - This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

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Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

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