Electroluminescence emission of crystalline germanium nanoclusters deposited with laser assistance at low temperature

Hsin Ying Lee, Ching Ting Lee, Tai Cheng Tsai

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

With CO2 laser assistance, crystalline Ge nanocluster-embedded Ge films were deposited at low temperature using a conventional plasma-enhanced chemical vapor deposition system. Raman spectrum showed a wavenumber peak at 290 cm-1 which corresponded to the crystalline Ge nanoclusters in the Ge film deposited with CO2 laser assistance. Crystalline Ge nanoclusters embedded in Ge matrices were observed from transmission electron microscopy (TEM) images and electron diffraction pattern. The electroluminescent devices constructed with multilayered Ge nanoclustersembedded Ge films were fabricated. The experimental results demonstrated that the electroluminescence emission originated from the radiative recombination of the electron-hole pairs in the Ge nanoclusters.

原文English
頁(從 - 到)3988-3992
頁數5
期刊Journal of Nanoscience and Nanotechnology
14
發行號5
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

指紋 深入研究「Electroluminescence emission of crystalline germanium nanoclusters deposited with laser assistance at low temperature」主題。共同形成了獨特的指紋。

引用此