Electroluminescence from solution grown n-ZnO nanorod/p-GaN- heterostructured light emitting diodes

Saikat Dalui, Chih Chien Lin, Hsin Ying Lee, Shiu Fang Yen, Yao Jung Lee, Ching Ting Lee

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)


To fabricate n-ZnO nanorod/p-GaN-heterostructured light emitting diodes, well-aligned ZnO nanorod arrays were synthesized on metallorganic chemical vapor deposited p-GaN layers on sapphire substrates using low temperature and low cost solution growth techniques. Current-voltage measurements showed the formation of a diode structure with a typical diode characteristic having a turn-on voltage of 4.8 V. Microstructure and room-temperature photoluminescence measurements confirmed the growth of ZnO nanorod arrays with a near-perfect microstructure, stoichiometry, and excellent optical quality. Room-temperature electroluminescence in the blue-violet region with a peak wavelength of ∼398 nm was observed under a forward bias. No defect-related emission was observed in the deep visible region.

期刊Journal of the Electrochemical Society
出版狀態Published - 2010 四月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學


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