Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

Jiun Ting Chen, Wei Chih Lai, Chi Heng Chen, Ya Yu Yang, Jinn Kong Sheu, Li Wen Lai

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)


We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO 2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.

頁(從 - 到)11873-11879
期刊Optics Express
出版狀態Published - 2011 六月 6

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學


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