TY - JOUR
T1 - Electron-field-emission properties of gallium compound by ammonification of Ga 2O3 Nanowires
AU - Hsueh, Han Ting
AU - Weng, Wen Yin
AU - Tsai, Tsung Ying
AU - Chang, Shoou Jinn
PY - 2013
Y1 - 2013
N2 - The authors report the growth of β-Ga2O 3 nanowires and the conversion of β-Ga 2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O 3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900 °C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950 °C, the threshold field drastically increased to 13.13 V/μm.
AB - The authors report the growth of β-Ga2O 3 nanowires and the conversion of β-Ga 2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O 3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900 °C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950 °C, the threshold field drastically increased to 13.13 V/μm.
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U2 - 10.1109/TNANO.2013.2268854
DO - 10.1109/TNANO.2013.2268854
M3 - Article
AN - SCOPUS:84883829857
SN - 1536-125X
VL - 12
SP - 692
EP - 695
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 5
M1 - 6542739
ER -