The authors report the growth of β-Ga2O 3 nanowires and the conversion of β-Ga 2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O 3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900 °C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950 °C, the threshold field drastically increased to 13.13 V/μm.
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