Electron-field-emission properties of gallium compound by ammonification of Ga 2O3 Nanowires

Han Ting Hsueh, Wen Yin Weng, Tsung Ying Tsai, Shoou Jinn Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The authors report the growth of β-Ga2O 3 nanowires and the conversion of β-Ga 2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O 3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900 °C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950 °C, the threshold field drastically increased to 13.13 V/μm.

原文English
文章編號6542739
頁(從 - 到)692-695
頁數4
期刊IEEE Transactions on Nanotechnology
12
發行號5
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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