Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

We apply the full power of modern electronic band-structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single-donor electron spin. Spin-resonance transistors may form the technological basis for quantum information processing. One- and two-qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g factor [Formula Presented] this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain silicon-germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

原文English
頁(從 - 到)10
頁數1
期刊Physical Review A - Atomic, Molecular, and Optical Physics
62
發行號1
DOIs
出版狀態Published - 2000

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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