摘要
A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.
原文 | English |
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頁(從 - 到) | 12306-12301 |
頁數 | 6 |
期刊 | Physical Review A - Atomic, Molecular, and Optical Physics |
卷 | 62 |
發行號 | 1 |
出版狀態 | Published - 2000 7月 |
All Science Journal Classification (ASJC) codes
- 原子與分子物理與光學