A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.
|頁（從 - 到）||12306-12301|
|期刊||Physical Review A - Atomic, Molecular, and Optical Physics|
|出版狀態||Published - 2000 七月|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics