Electron transport in In-rich in xGa 1-xN films

Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, T. Y. Liu

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In xGa 1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In xGa 1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In xGa 1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In xGa 1-xN (x=1, 0.98, and 0.92) films.

原文English
文章編號046101
期刊Journal of Applied Physics
97
發行號4
DOIs
出版狀態Published - 2005 二月 15

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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