Electron transport through individual Ge self-assembled quantum dots on Si

Hung Chin Chung, Wen Huei Chu, Chuan Pu Liu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Electrical properties of self-assembled quantum dots have been the subject of intensive research due to quantum confinement. Here the authors report on the fabrication of Ge quantum dots (QDs) onto Si (100) by ultrahigh-vacuum ion beam sputtering and the electrical properties of individual QDs. Transmission electron microscopy images show that samples with completely incoherent or coherent semispherical islands can be produced under different ion energies. The current-voltage (I-V) characteristics with conductive atomic force microscopy at room temperature, exhibit linear behavior at low bias and nonlinear behavior at large bias from coherent islands, whereas the staircase structures are clearly observed in the I-V curve from incoherent islands, which are attributed to electron tunneling through the quantized energy levels of a single Ge QD.

原文English
文章編號082105
期刊Applied Physics Letters
89
發行號8
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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