Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

H. M. Tsai, J. C. Jan, J. W. Chiou, W. F. Pong, M. H. Tsai, Y. K. Chang, Y. Y. Chen, Y. W. Yang, L. J. Lai, J. J. Wu, C. T. Wu, K. H. Chen, L. C. Chen

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8 引文 斯高帕斯(Scopus)

摘要

X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.

原文English
頁(從 - 到)2393-2395
頁數3
期刊Applied Physics Letters
79
發行號15
DOIs
出版狀態Published - 2001 十月 8

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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