Electronic and junction properties of poly(2,5-dimethoxyaniline)-polyethylene oxide blend/metal Schottky diodes

Li Ming Huang, Ten Chin Wen, A. Gopalan

研究成果: Article同行評審

34 引文 斯高帕斯(Scopus)

摘要

Schottky barrier diode devices were fabricated in a sandwich configuration with a blend film consisting of a conducting polymer, poly(2,5-dimethoxyaniline), PDMA in an insulating matrix, polyethylene oxide (PEO). The influence of two different dopants, sulphate anion (SA) or methane sulfonate anion (MSA), in the electronic properties of the device was followed using the devices: ITO/PDMA (SA)-PEO/Al and ITO/PDMA (MSA)-PEO/Al. Current (7)-Voltage (F) characteristics were recorded for making a comparative evaluation of the electronic and junction properties of the devices. The junction and electronic parameters were analyzed and compared in the light of differences in the electronic state, morphology and transport of carriers. The device turn on voltage was found to be higher for Al/PEO-PDMA (MSA)/ITO (∼3.0 V) in comparison to Al/ PEO-PDMA (SA)/ITO (-2.85 V). The electronic states of PDMA doped with SA or MSA dopant were ascertained by optical UV-Visible spectroscopy. AC-impedance measurements were made for the devices and the values of bulk resistance (Rc), depletion resistance (R d) and depletion layer width (W) were deduced through a proposed equivalent circuit. W for the device with PEO-PDMA (MSA) is more (∼24 nm) than the device with PEO-PDMA (SA) (∼8.5 nm). The observed higher Φ B for PDMA-PEO (MSA) is consistent with this observation.

原文English
頁(從 - 到)300-307
頁數8
期刊Thin Solid Films
473
發行號2
DOIs
出版狀態Published - 2005

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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