Electronic properties of carbon nanotubes under external fields

T. S. Li, M. F. Lin

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

Low-energy electronic properties of carbon nanotubes subject to the influences of a transverse electric field and a magnetic field with angle α are studied by the tight-binding model. The external fields would modulate energy dispersions, alter energy gaps, destroy state degeneracy, and create additional band-edge states. The semiconductor-metal transition is predicted for type-I and type-III nanotubes at all α 's, while it only occurs at certain α 's for type-II nanotubes. The effects of external fields on the band structures are also directly reflected in the density of states (DOS). The numbers, the heights, and the positions of the DOS divergent peaks are strongly dependent on the external fields. Furthermore, the evolution of the DOS peak positions with the electric field strength is also investigated.

原文English
文章編號075432
期刊Physical Review B - Condensed Matter and Materials Physics
73
發行號7
DOIs
出版狀態Published - 2006 三月 6

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

指紋

深入研究「Electronic properties of carbon nanotubes under external fields」主題。共同形成了獨特的指紋。

引用此