Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy

Cheng Tai Kuo, Hong Mao Lee, Chung Lin Wu, Hung Wei Shiu, Chia Hao Chen, Shangjr Gwo

研究成果: Conference contribution

摘要

We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the "intrinsic" valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

原文English
主出版物標題III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
頁面87-92
頁數6
出版狀態Published - 2010 七月 7
事件2009 MRS Fall Meeting - Boston, MA, United States
持續時間: 2009 十一月 302009 十二月 4

出版系列

名字Materials Research Society Symposium Proceedings
1202
ISSN(列印)0272-9172

Other

Other2009 MRS Fall Meeting
國家/地區United States
城市Boston, MA
期間09-11-3009-12-04

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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