Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy

Cheng Tai Kuo, Hong Mao Lee, Chung Lin Wu, Hung Wei Shiu, Chia Hao Chen, Shangjr Gwo

研究成果: Conference contribution

摘要

We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the "intrinsic" valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

原文English
主出版物標題III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
頁面87-92
頁數6
出版狀態Published - 2010 七月 7
事件2009 MRS Fall Meeting - Boston, MA, United States
持續時間: 2009 十一月 302009 十二月 4

出版系列

名字Materials Research Society Symposium Proceedings
1202
ISSN(列印)0272-9172

Other

Other2009 MRS Fall Meeting
國家United States
城市Boston, MA
期間09-11-3009-12-04

指紋

Photoelectrons
Nitrides
Electronic properties
nitrides
Microscopic examination
photoelectrons
Spectroscopy
microscopy
Scanning
scanning
electronics
spectroscopy
Valence bands
Electronic structure
Heterojunctions
heterojunctions
cleavage
Doping (additives)
Polarization
dipoles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

Kuo, C. T., Lee, H. M., Wu, C. L., Shiu, H. W., Chen, C. H., & Gwo, S. (2010). Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy. 於 III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (頁 87-92). (Materials Research Society Symposium Proceedings; 卷 1202).
Kuo, Cheng Tai ; Lee, Hong Mao ; Wu, Chung Lin ; Shiu, Hung Wei ; Chen, Chia Hao ; Gwo, Shangjr. / Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy. III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. 2010. 頁 87-92 (Materials Research Society Symposium Proceedings).
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abstract = "We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the {"}intrinsic{"} valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.",
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Kuo, CT, Lee, HM, Wu, CL, Shiu, HW, Chen, CH & Gwo, S 2010, Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy. 於 III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. Materials Research Society Symposium Proceedings, 卷 1202, 頁 87-92, 2009 MRS Fall Meeting, Boston, MA, United States, 09-11-30.

Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy. / Kuo, Cheng Tai; Lee, Hong Mao; Wu, Chung Lin; Shiu, Hung Wei; Chen, Chia Hao; Gwo, Shangjr.

III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. 2010. p. 87-92 (Materials Research Society Symposium Proceedings; 卷 1202).

研究成果: Conference contribution

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AU - Lee, Hong Mao

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AU - Gwo, Shangjr

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AB - We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the "intrinsic" valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

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Kuo CT, Lee HM, Wu CL, Shiu HW, Chen CH, Gwo S. Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy. 於 III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. 2010. p. 87-92. (Materials Research Society Symposium Proceedings).