Electronic properties of single-walled carbon nanotubes under electric and magnetic fields

P. L. Lai, S. C. Chen, M. F. Lin

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The sp3 tight-binding model, with the nearest-neighbor interactions, is used to calculate electronic structures of single-walled carbon nanotubes under uniform transverse electric fields and magnetic fields with gazing angles. The external fields strongly affect energy dispersions, energy gap, band-edge states, state degeneracy, and subband spacings. They make semiconducting carbon nanotubes exhibit the semiconductor-metal transitions. The changes of band structures are directly reflected on the features of density of states (DOS). The electric and magnetic fields alter the heights, positions and number of the prominent peaks in DOS.

原文English
頁(從 - 到)2056-2058
頁數3
期刊Physica E: Low-Dimensional Systems and Nanostructures
40
發行號6
DOIs
出版狀態Published - 2008 四月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學

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