Electronic properties of WTe2 and MoTe2 single crystals

A. N. Domozhirova, A. A. Makhnev, E. I. Shreder, S. V. Naumov, A. V. Lukoyanov, V. V. Chistyakov, J. C.A. Huang, A. A. Semiannikova, P. S. Korenistov, V. V. Marchenkov

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

WTe2 and MoTe2 single crystals were grown, and their electrical resistivity in the temperature range from 80 K to 300 K, optical properties at room temperature in the spectral range of 0.17-5.0 eV were studied as well as theoretical calculations of the electronic structure were performed. It is shown that the temperature dependence of the electrical resistivity of orthorhombic WTe2 has a metallic type with resistivity value of (0.5-1) mOhmcm, while hexagonal MoTe2 has a semiconductor one and resistivity value (0.5-1) Ohmcm, which is three orders of magnitude larger than the resistivity of WTe2. Optical properties indicated that there is no contribution from free carriers in the entire spectral range studied. The calculated densities of the electronic states of MoTe2 and WTe2 showed the presence of a bunch of the molybdenum and tungsten electronic states in a wide energy interval with strong admixing of tellurium states. In the WTe2 compound, the larger number of the electronic states is located near the Fermi energy, characterizing a more metallic state in this compound as compared to MoTe2.

原文English
文章編號012149
期刊Journal of Physics: Conference Series
1389
發行號1
DOIs
出版狀態Published - 2019 十一月 28
事件7th Euro-Asian Symposium on Trends in Magnetism, EASTMAG 2019 - Ekaterinburg, Russian Federation
持續時間: 2019 九月 82019 九月 13

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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