Electronic structure characteristics of MBE (molecular beam epitaxy)-grown diluted magnetic semiconductor Ga1-xCrxN films

Tomoyuki Takeuchi, Munetaka Taguchi, Yoshihisa Harada, Takashi Tokushima, Yasutaka Takata, Ashish Chainani, Jung Jin Kim, Hisao Makino, Takafumi Yao, Takeyo Tsukamoto, Shik Shin, Keisuke Kobayashi

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)


We study the electronic structure of newly discovered MBE-grown diluted magnetic semiconductor Ga1-xCrxN(x = 0.0, 0.06, 0.29, 1.0) films, using X-ray absorption spectroscopy across the N 1s and Cr 2p edges. Angle-dependent N 1s absorption results of pure GaN and ferromagnetic Ga 0.94Cr0.06N exhibit identical behaviour of the N 2p x, 2py and 2pz states, typical of the wurtzite structure. In addition, Ga0.94Cr0.06N shows a new feature derived from N 2p states hybridized with Cr 3d states, within the band gap of GaN. Cr 2p absorption spectra show spectral features consistent with tetrahedrally co-ordinated CrN4 cluster calculations. Excess Cr-content shows up as cubic CrN impurity phase, which is confirmed by comparing experimentally with pure CrN spectral features as well as with cluster calculations in octahedral geometry. The results indicate that the new unoccupied states formed in the band gap of the Cr-substituted wurtzite GaN are important for ferromagnetism.

頁(從 - 到)L153-L155
期刊Japanese Journal of Applied Physics, Part 2: Letters
出版狀態Published - 2005

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學(雜項)
  • 物理與天文學 (全部)


深入研究「Electronic structure characteristics of MBE (molecular beam epitaxy)-grown diluted magnetic semiconductor Ga<sub>1-x</sub>Cr<sub>x</sub>N films」主題。共同形成了獨特的指紋。