Electronic structure of a monolayer graphite layer in a modulated electric field

J. H. Ho, Y. H. Lai, C. L. Lu, J. S. Hwang, C. P. Chang, M. F. Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The π-electronic structure of a monolayer graphite, with or without a uniform magnetic field, is studied by the tight-binding model. Electronic properties strongly depend on the strength, the direction, and the period of the modulated electric field. Such field could lead to the drastic changes in state degeneracy, energy dispersions, band spacings, wave functions, and band-edge states. The main features of energy bands are directly reflected in density of states. DOS could exhibit special structures, such as asymmetric square-root divergences, symmetric logarithmic divergences, symmetric delta-function-like divergences, and discontinuities.

原文English
頁(從 - 到)70-75
頁數6
期刊Physics Letters, Section A: General, Atomic and Solid State Physics
359
發行號1
DOIs
出版狀態Published - 2006 十一月 6

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

指紋

深入研究「Electronic structure of a monolayer graphite layer in a modulated electric field」主題。共同形成了獨特的指紋。

引用此