Electronic structure of black SmS. II. Angle-resolved photoemission spectroscopy

T. Ito, Ashish Atma Chainani, H. Kumigashira, T. Takahashi, N. K. Sato

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We have studied the electronic band structure of semiconducting black SmS with high-resolution angle-resolved photoemission spectroscopy (ARPES). The valence band consists of two well-separated groups of bands: almost nondispersive bands near EF and highly dispersive bands at higher binding energy. The former is ascribed to the Sm2+ (4f6→4f5) multiplet and the latter to mainly the S 3p states. We found a small but distinct energy dispersion in the Sm 4f-derived bands near EF. This indicates a strong hybridization between the "localized" Sm 4f electrons and the "itinerant" conduction electrons, leading to the "delocalized" Sm 4f states in mixed-valent SmS. We have compared the present ARPES results with a recent periodic Anderson model calculation.

原文English
文章編號155202
頁(從 - 到)1552021-1552024
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
65
發行號15
出版狀態Published - 2002 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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