Electronic structure of black SmS. II. Angle-resolved photoemission spectroscopy

T. Ito, A. Chainani, H. Kumigashira, T. Takahashi, N. K. Sato

研究成果: Article同行評審

摘要

We have studied the electronic band structure of semiconducting black SmS with high-resolution angle-resolved photoemission spectroscopy (ARPES). The valence band consists of two well-separated groups of bands: almost nondispersive bands near (formula presented) and highly dispersive bands at higher binding energy. The former is ascribed to the (formula presented) (formula presented) multiplet and the latter to mainly the S (formula presented) states. We found a small but distinct energy dispersion in the Sm (formula presented) This indicates a strong hybridization between the “localized” Sm (formula presented) electrons and the “itinerant” conduction electrons, leading to the “delocalized” Sm (formula presented) states in mixed-valent SmS. We have compared the present ARPES results with a recent periodic Anderson model calculation [C. Lehner et al., Phys. Rev. B 58, 6807 (1998)].

原文English
頁(從 - 到)1-4
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
65
發行號15
DOIs
出版狀態Published - 2002 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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