Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar cells, using a safe organic precursor, hexamethyl-disilazane. Using the Lucovsky-Phillips criterion of bond coordination constraints, we grow high-quality thin (∼20 Å) and thick (up to 2700 Å) films which are carbon free (< 1.0%) as characterized by x-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy depth profiles. Core-level and valence band XPS is used to conclusively identify oxynitride bonding and band gap reduction in SiOxNy. For a λ/4 'blue' anti-reflection coating on the solar cells with uniform thickness (870 ± 15 Å) and composition (SiO1.6±0.1N0.3±0.05), an efficiency (AM 1) increase of 1% is obtained.
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