Electronic structure of carbon-free silicon oxynitride films grown using an organic precursor hexamethyl-disilazane

A. Chainani, S. K. Nema, P. Kikani, P. I. John

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar cells, using a safe organic precursor, hexamethyl-disilazane. Using the Lucovsky-Phillips criterion of bond coordination constraints, we grow high-quality thin (∼20 Å) and thick (up to 2700 Å) films which are carbon free (< 1.0%) as characterized by x-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy depth profiles. Core-level and valence band XPS is used to conclusively identify oxynitride bonding and band gap reduction in SiOxNy. For a λ/4 'blue' anti-reflection coating on the solar cells with uniform thickness (870 ± 15 Å) and composition (SiO1.6±0.1N0.3±0.05), an efficiency (AM 1) increase of 1% is obtained.

原文English
文章編號103
頁(從 - 到)L44-L47
期刊Journal of Physics D: Applied Physics
35
發行號11
DOIs
出版狀態Published - 2002 六月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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