Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2

Drew W. Latzke, Wentao Zhang, Aslihan Suslu, Tay Rong Chang, Hsin Lin, Horng Tay Jeng, Sefaattin Tongay, Junqiao Wu, Arun Bansil, Alessandra Lanzara

研究成果: Article同行評審

86 引文 斯高帕斯(Scopus)

摘要

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS2, resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our results provide an important reference for future studies of electronic properties of MoS2 and WS2 and their applications in spintronics and valleytronics devices.

原文English
文章編號235202
期刊Physical Review B - Condensed Matter and Materials Physics
91
發行號23
DOIs
出版狀態Published - 2015 六月 11

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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