Electronic transitions in a Ge rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy

P. A. Dafesh, V. Arbet, K. L. Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si0.2Ge0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
編輯Fred H. Pollak, Manuel Cardona, David E. Aspnes
發行者Publ by Int Soc for Optical Engineering
頁面308-319
頁數12
ISBN(列印)0819403377
出版狀態Published - 1990
事件International Conference on Modulation Spectroscopy - San Diego, CA, USA
持續時間: 1990 三月 191990 三月 21

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
1286
ISSN(列印)0277-786X

Conference

ConferenceInternational Conference on Modulation Spectroscopy
城市San Diego, CA, USA
期間90-03-1990-03-21

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

指紋

深入研究「Electronic transitions in a Ge rich strain-symmetrized Si<sub>8</sub>Ge<sub>32</sub> superlattice measured by photoreflectance spectroscopy」主題。共同形成了獨特的指紋。

引用此