Electronic transport and Schottky barrier height of Ni contact on p-type GaN

Yow Jon Lin, Ching Ting Lee, Shih Sheng Chang, Hsing Cheng Chang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

原文English
文章編號095107
期刊Journal of Physics D: Applied Physics
41
發行號9
DOIs
出版狀態Published - 2008 五月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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