The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.
All Science Journal Classification (ASJC) codes
- 化學工程 (全部)