Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

Yi Jung Liu, Tsung Yuan Tsai, Chih Hung Yen, Li Yang Chen, Tsung Han Tsai, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Wen Chau Liu

研究成果: Article同行評審

摘要

The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.

原文English
頁(從 - 到)H406-H408
期刊Electrochemical and Solid-State Letters
13
發行號12
DOIs
出版狀態Published - 2010 十月 29

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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