Elemental and Compound Semiconductor Devices Today and Beyond: Influence of Advanced Epitaxial Processes

研究成果: Article同行評審

摘要

This paper attempts to describe the advances of epitaxy of elemental and compound semiconductors and their impact on new physics, effects and applications of new devices. The impact of the recent epitaxy on material research is truly revolutionary. However, the scope is too immense to cover in a limited space and time. In lieu of the detailed descriptions of the epitaxial processes, I will try to highlight the most important substances of the advance. Several examples of newly discovered effects and new devices based on the artificially structured materials that are made possible by the advanced epitaxial techniques will be presented. These examples are by no mean exclusive and many other important ones are inadvertent omitted owing to the limited space and preferential interests of the author. Finally, some on-going research efforts as well as possible directions of further development of thin film epitaxy are discussed.

原文English
頁(從 - 到)2-12
頁數11
期刊Proceedings of SPIE - The International Society for Optical Engineering
797
DOIs
出版狀態Published - 1987 四月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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