The composite organosilicate glass (OSG, SiOC:H) incorporated with nitrogen and fluorine (N-F:OSG) and OSG thin films were deposited on p-type (100) silicon substrates at various temperatures (300°C-400°C) by plasma enhanced chemical vapor deposition method using nitrogen trifluoride (NF3) with trimethelysilane (TMS) and oxygen as precursors. The nitrogen and fluorine content in the composite films were adjusted by varying NF3/TMS gas flow ratio (R) from 0.5 to 1. The film characteristics were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The absorbance spectrum of Fourier transform infrared spectroscopy shows that Si bonding in the form of Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG composite films. Meanwhile, the refractive index of the N-F:OSG films increases slightly with increasing deposition temperature. The permittivity of the N-F:OSG is slightly lower than that of the OSG film. The N-F:OSG films with higher R ratios also exhibit higher mechanical hardness and higher dielectric breakdown voltage and superior to those of the OSG films.
|出版狀態||Published - 2003 一月 1|
|事件||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States|
持續時間: 2003 十月 12 → 2003 十月 17
|Other||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium|
|期間||03-10-12 → 03-10-17|
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