摘要
This chapter addresses emerging resistive nonvolatile memory (NVM) circuit design techniques and implementations for energy-efficient systems. First we introduce emerging memory technologies, including resistive RAM (ReRAM), phase change memory (PCM), and spin-torque transfer magnetic RAM (STT-MRAM). Next, we examine circuit design challenges for read and write operations, and review some of the advanced circuit techniques. Lastly, we discuss the implementation for energy-efficient systems with nonvolatile logic and nonvolatile SRAM using emerging resistive NVM.
| 原文 | English |
|---|---|
| 主出版物標題 | Beyond-CMOS Technologies for Next Generation Computer Design |
| 發行者 | Springer International Publishing |
| 頁面 | 85-132 |
| 頁數 | 48 |
| ISBN(電子) | 9783319903859 |
| ISBN(列印) | 9783319903842 |
| DOIs | |
| 出版狀態 | Published - 2018 1月 1 |
All Science Journal Classification (ASJC) codes
- 一般工程
- 一般電腦科學