In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.
|頁（從 - 到）||2463-2466|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2006 四月 7|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)