Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structure

Tzuen Hsi Huang, Ming Jer Chen

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

The I-V characteristics of a gated lateral bipolar transistor in an n-MOSFET structure have been measured. The measured collector current has exhibited two distinct components: (i) the gate-controlled collector current due to the modulation of the surface space-charge region; and (ii) the pure lateral bipolar transistor collector current which is independent of the gate bias applied. These two components have been separated experimentally and have been reproduced by analytic model expressions. The work is useful not only for understanding the hybrid-mode operation but also for designing appropriately the gated lateral bipolar transistors.

原文English
頁(從 - 到)115-119
頁數5
期刊Solid State Electronics
38
發行號1
DOIs
出版狀態Published - 1995 一月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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