Engineered design and fabrication of long lifetime multifunctional devices based on electrically conductive diamond ultrananowire multifinger integrated cathodes

Adhimoorthy Saravanan, Bohr Ran Huang, Divinah Manoharan, Deepa Kathiravan, I. Nan Lin

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Multi-functional vacuum electron field emission (VEFE) devices were developed using a laterally arranged multi-finger configuration with negative biased ultrananocrystalline-diamond graphite (NBG-UNDG) cathode/anode materials. The NBG-UNDG based multifinger lateral electron field emitter (ML-EFE) devices were fabricated using micropatterning and a simple lift-off process. The fabrication process of ML-EFE devices is observed to markedly enhance the electron field emission (EFE) properties of NBG-UNDG materials. The EFE investigations of ML-EFE devices revealed a low turn-on field for EFE at a voltage as low as 2.02 V μm-1 with a high current density of 1.51 mA at an electric field of 2.6 V μm-1. The presence of multi-layer nanographite (ng) in NBG-UNDG diamond nanowires and a Au interlayer at the film-to-substrate interface are presumed to be the main factors, which result in superior EFE properties for NBG-UNDG ML-EFE devices. The enhanced properties of NBG-UNDG based multifinger integrated cathodes have noteworthy potential for the generation of new display panel applications. Using NBG-UNDG ML-EFE devices as cathodes, a microplasma device was fabricated that can generate plasma at a low voltage of 260 V. Also, a photodetector, which provides an excellent photoresponsivity of 1.7 A W-1, was demonstrated using NBG-UNDG ML-EFE devices as sensing materials. Moreover, a NBG-UNDG based self-aligned cathode and gate VEFE transistor was fabricated, which exhibits enhanced transistor characteristics with a low turn-on gate voltage of 320 V. The fabrication of these NBG-UNDG devices, which can be operated at high power and under various vacuum conditions with long lifetime, demonstrates a practical approach in diamond based vacuum microelectronics and integrated circuits.

原文English
頁(從 - 到)9727-9737
頁數11
期刊Journal of Materials Chemistry C
4
發行號41
DOIs
出版狀態Published - 2016

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料化學

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