Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang, C. Y. Hsu, S. F. Chen, C. P. Liu, Y. F. Liao, M. Z. Lin, C. H. Lee

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

原文English
文章編號123923
期刊Journal of Applied Physics
101
發行號12
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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