Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang; C. Y. Hsu; S. F. Chen; C. P. Liu; Y. F. Liao; M. Z. Lin; C. H. Lee

doi:10.1063/1.2748860

Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang
, C. Y. Hsu
, S. F. Chen
, C. P. Liu
, Y. F. Liao
, M. Z. Lin
, C. H. Lee

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

原文	English
文章編號	123923
期刊	Journal of Applied Physics
卷	101
發行號	12
DOIs	https://doi.org/10.1063/1.2748860
出版狀態	Published - 2007

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1063/1.2748860

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title = "Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition",

abstract = "The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.",

author = "Huang, \{J. C.A.\} and Hsu, \{C. Y.\} and Chen, \{S. F.\} and Liu, \{C. P.\} and Liao, \{Y. F.\} and Lin, \{M. Z.\} and Lee, \{C. H.\}",

note = "Funding Information: This work has been supported by the National Science Council of the ROC under Grant No. NSC95-2120-M-006-004, Taiwan SPIN Research Center under No. 95-EC-17-A-01-S1-026, and Micro-Nano Technology Research Center of National Cheng Kung University. The authors would like to give thanks to Professor W. C. Chang and C. H. Chiu for kind assistance in using the vibrating sample magnetometer.",

year = "2007",

doi = "10.1063/1.2748860",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

AU - Huang, J. C.A.

AU - Hsu, C. Y.

AU - Chen, S. F.

AU - Liu, C. P.

AU - Liao, Y. F.

AU - Lin, M. Z.

AU - Lee, C. H.

N1 - Funding Information: This work has been supported by the National Science Council of the ROC under Grant No. NSC95-2120-M-006-004, Taiwan SPIN Research Center under No. 95-EC-17-A-01-S1-026, and Micro-Nano Technology Research Center of National Cheng Kung University. The authors would like to give thanks to Professor W. C. Chang and C. H. Chiu for kind assistance in using the vibrating sample magnetometer.

PY - 2007

Y1 - 2007

N2 - The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

AB - The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

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SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123923

ER -

Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

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