Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Chung Yi Wu, Yu Song Cheng, Ming Hao Chien, Mau-phon Houng

研究成果: Article

11 引文 (Scopus)

摘要

This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

原文English
頁(從 - 到)159-163
頁數5
期刊Thin Solid Films
573
DOIs
出版狀態Published - 2014 十二月 31

指紋

Ohmic contacts
Heterojunctions
heterojunctions
electric contacts
Solar cells
solar cells
Electrodes
electrodes
Carrier transport
Voltage measurement
Electric current measurement
Passivation
electrical measurement
passivity
Conversion efficiency
insertion
dipoles
cells
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

Hsu, Feng Hao ; Wang, Na Fu ; Tsai, Yu Zen ; Wu, Chung Yi ; Cheng, Yu Song ; Chien, Ming Hao ; Houng, Mau-phon. / Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes. 於: Thin Solid Films. 2014 ; 卷 573. 頁 159-163.
@article{10dd48c802d5486e9330c6426e5c19c1,
title = "Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes",
abstract = "This study confirms that a LiF/Al (LiF thickness = 15 {\AA}) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31{\%}, which was 2.1{\%} greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.",
author = "Hsu, {Feng Hao} and Wang, {Na Fu} and Tsai, {Yu Zen} and Wu, {Chung Yi} and Cheng, {Yu Song} and Chien, {Ming Hao} and Mau-phon Houng",
year = "2014",
month = "12",
day = "31",
doi = "10.1016/j.tsf.2014.11.025",
language = "English",
volume = "573",
pages = "159--163",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes. / Hsu, Feng Hao; Wang, Na Fu; Tsai, Yu Zen; Wu, Chung Yi; Cheng, Yu Song; Chien, Ming Hao; Houng, Mau-phon.

於: Thin Solid Films, 卷 573, 31.12.2014, p. 159-163.

研究成果: Article

TY - JOUR

T1 - Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

AU - Hsu, Feng Hao

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Wu, Chung Yi

AU - Cheng, Yu Song

AU - Chien, Ming Hao

AU - Houng, Mau-phon

PY - 2014/12/31

Y1 - 2014/12/31

N2 - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

AB - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

UR - http://www.scopus.com/inward/record.url?scp=84915813595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915813595&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.11.025

DO - 10.1016/j.tsf.2014.11.025

M3 - Article

AN - SCOPUS:84915813595

VL - 573

SP - 159

EP - 163

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -