Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu; Na Fu Wang; Yu Zen Tsai; Chung Yi Wu; Yu Song Cheng; Ming Hao Chien; Mau Phon Houng

doi:10.1016/j.tsf.2014.11.025

Enhanced carrier collection in p-Ni_{1 - X}O:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Chung Yi Wu, Yu Song Cheng, Ming Hao Chien, Mau Phon Houng

研究成果: Article

11 引文斯高帕斯（Scopus）

摘要

This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni_{1 - x}O:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

原文	English
頁（從 - 到）	159-163
頁數	5
期刊	Thin Solid Films
卷	573
DOIs	https://doi.org/10.1016/j.tsf.2014.11.025
出版狀態	Published - 2014 十二月 31

指紋

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

引用此

Hsu, F. H., Wang, N. F., Tsai, Y. Z., Wu, C. Y., Cheng, Y. S., Chien, M. H., & Houng, M. P. (2014). Enhanced carrier collection in p-Ni_{1 - X}O:Li/n-Si heterojunction solar cells using LiF/Al electrodes. Thin Solid Films, 573, 159-163. https://doi.org/10.1016/j.tsf.2014.11.025

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abstract = "This study confirms that a LiF/Al (LiF thickness = 15 {\AA}) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.",

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AU - Tsai, Yu Zen

AU - Wu, Chung Yi

AU - Cheng, Yu Song

AU - Chien, Ming Hao

AU - Houng, Mau Phon

PY - 2014/12/31

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N2 - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

AB - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

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存取文件

10.1016/j.tsf.2014.11.025