Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu; Na Fu Wang; Yu Zen Tsai; Chung Yi Wu; Yu Song Cheng; Ming Hao Chien; Mau Phon Houng

doi:10.1016/j.tsf.2014.11.025

Enhanced carrier collection in p-Ni_{1 - X}O:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Chung Yi Wu, Yu Song Cheng, Ming Hao Chien, Mau Phon Houng

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni_{1 - x}O:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

原文	English
頁（從 - 到）	159-163
頁數	5
期刊	Thin Solid Films
卷	573
DOIs	https://doi.org/10.1016/j.tsf.2014.11.025
出版狀態	Published - 2014 12月 31

All Science Journal Classification (ASJC) codes

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2014.11.025

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引用此

@article{10dd48c802d5486e9330c6426e5c19c1,

title = "Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes",

abstract = "This study confirms that a LiF/Al (LiF thickness = 15 {\AA}) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.",

author = "Hsu, {Feng Hao} and Wang, {Na Fu} and Tsai, {Yu Zen} and Wu, {Chung Yi} and Cheng, {Yu Song} and Chien, {Ming Hao} and Houng, {Mau Phon}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the National Science Council of Taiwan, ROC (Grant Nos. NSC-100-2221-E-006-043-MY2 and MOST 103-2221-E-230-019 ). Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2014.11.025",

language = "English",

volume = "573",

pages = "159--163",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

AU - Hsu, Feng Hao

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Wu, Chung Yi

AU - Cheng, Yu Song

AU - Chien, Ming Hao

AU - Houng, Mau Phon

N1 - Funding Information: The authors gratefully acknowledge the financial support of the National Science Council of Taiwan, ROC (Grant Nos. NSC-100-2221-E-006-043-MY2 and MOST 103-2221-E-230-019 ). Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014/12/31

Y1 - 2014/12/31

N2 - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

AB - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

UR - http://www.scopus.com/inward/record.url?scp=84915813595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915813595&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.11.025

DO - 10.1016/j.tsf.2014.11.025

M3 - Article

AN - SCOPUS:84915813595

VL - 573

SP - 159

EP - 163

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

摘要

All Science Journal Classification (ASJC) codes

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引用此

Enhanced carrier collection in p-Ni_{1 - X}O:Li/n-Si heterojunction solar cells using LiF/Al electrodes