This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.
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