摘要
This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.
原文 | English |
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頁(從 - 到) | 159-163 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 573 |
DOIs | |
出版狀態 | Published - 2014 12月 31 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 表面和介面
- 表面、塗料和薄膜
- 金屬和合金
- 材料化學