@article{82fa6a613f6a46ab83974b898c2adda6,
title = "Enhanced current spreading for GaN-based side-view LEDs by adding an metallic stripe across the long side of the chip",
abstract = "The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.",
author = "Chang, {L. M.} and Chang, {Shoou Jinn} and Jiao, {Z. Y.} and Shen, {C. F.} and Ko, {Tsun Kai} and Hon, {S. J.} and Chiou, {Yu Zung} and Chiou, {H. Y.}",
note = "Funding Information: Manuscript received April 8, 2012; revised May 31, 2012; accepted June 11, 2012. Date of publication June 22, 2012; date of current version July 20, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, NCKU, in part by the Research Center for Energy Technology and Strategy, NCKU, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.",
year = "2012",
doi = "10.1109/LPT.2012.2205236",
language = "English",
volume = "24",
pages = "1412--1414",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "16",
}