Al doped ZnO nanowire arrays with controlled growth densities were fabricated on silicon without using catalysts via sputtering followed by thermal chemical vapor deposition (CVD). Scanning electron microscopy and high-resolution transmission electron microscopy results show that the AhZnO single-crystalline nanowires synthesized by CVD prefer growing epitaxially on the tips of the ZnO pyramids pre-synthesized by sputtering with the c-axis perpendicular to the substrate. Consequently, the densities of the as-grown AhZnO nanowires were controllable by changing the particle densities of the pre-grown ZnO seed layers. The Al concentration of the AhZnO nanowires were measured to be around 2.63 at.% by electron energy loss spectrum. Field-emission measurements show the turn-on fields of the AI:ZnO nanowire arrays with controllable area densities are tunable. Room-temperature cathodoluminescence spectra of the AI:ZnO nanowires show relatively strong and sharp ultraviolet emissions centered at 383 nm and broad green emissions at around 497 nm. This work provides a simple method to control the field emission and luminescence densities of Al doped ZnO nanowire arrays, which also shows good potential for developing nano-pixel optical devices.
All Science Journal Classification (ASJC) codes
- 化學 (全部)