Enhanced field electron emission from zinc-doped cuo nanowires

Tsung Ying Tsai, Cheng Liang Hsu, Shoou Jinn Chang, Szu I. Chen, Han Ting Hsueh, Ting Jen Hsueh

研究成果: Article

14 引文 斯高帕斯(Scopus)

摘要

Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.

原文English
文章編號6184273
頁(從 - 到)887-889
頁數3
期刊IEEE Electron Device Letters
33
發行號6
DOIs
出版狀態Published - 2012 四月 24

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Tsai, T. Y., Hsu, C. L., Chang, S. J., Chen, S. I., Hsueh, H. T., & Hsueh, T. J. (2012). Enhanced field electron emission from zinc-doped cuo nanowires. IEEE Electron Device Letters, 33(6), 887-889. [6184273]. https://doi.org/10.1109/LED.2012.2190037