Enhanced field electron emission from zinc-doped cuo nanowires

Tsung Ying Tsai; Cheng Liang Hsu; Shoou Jinn Chang; Szu I. Chen; Han Ting Hsueh; Ting Jen Hsueh

doi:10.1109/LED.2012.2190037

Enhanced field electron emission from zinc-doped cuo nanowires

Tsung Ying Tsai, Cheng Liang Hsu, Shoou Jinn Chang, Szu I. Chen, Han Ting Hsueh, Ting Jen Hsueh

微電子工程研究所

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.

原文	English
文章編號	6184273
頁（從 - 到）	887-889
頁數	3
期刊	IEEE Electron Device Letters
卷	33
發行號	6
DOIs	https://doi.org/10.1109/LED.2012.2190037
出版狀態	Published - 2012

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2012.2190037

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title = "Enhanced field electron emission from zinc-doped cuo nanowires",

abstract = "Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.",

author = "Tsai, {Tsung Ying} and Hsu, {Cheng Liang} and Chang, {Shoou Jinn} and Chen, {Szu I.} and Hsueh, {Han Ting} and Hsueh, {Ting Jen}",

note = "Funding Information: Manuscript received February 21, 2012; accepted March 1, 2012. Date of publication April 16, 2012; date of current version May 18, 2012. This work was supported by the Ministry of Education and the National Science Council of Taiwan under Contract NSC 100-2221-E-024 -011. The review of this letter was arranged by Editor A. Ortiz-Conde.",

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AU - Hsueh, Han Ting

AU - Hsueh, Ting Jen

N1 - Funding Information: Manuscript received February 21, 2012; accepted March 1, 2012. Date of publication April 16, 2012; date of current version May 18, 2012. This work was supported by the Ministry of Education and the National Science Council of Taiwan under Contract NSC 100-2221-E-024 -011. The review of this letter was arranged by Editor A. Ortiz-Conde.

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N2 - Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.

AB - Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.

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Enhanced field electron emission from zinc-doped cuo nanowires

摘要

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