Enhanced field electron emission from zinc-doped cuo nanowires

Tsung Ying Tsai, Cheng Liang Hsu, Shoou Jinn Chang, Szu I. Chen, Han Ting Hsueh, Ting Jen Hsueh

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.

原文English
文章編號6184273
頁(從 - 到)887-889
頁數3
期刊IEEE Electron Device Letters
33
發行號6
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Enhanced field electron emission from zinc-doped cuo nanowires」主題。共同形成了獨特的指紋。

引用此