Enhanced field emission of rm tio2 nanowires with uv illumination

Sin Hui Wang; Tsung Ying Tsai; Shoou Jinn Chang; Wen Yin Weng; Sheng Po Chang; Cheng Liang Hsu

doi:10.1109/LED.2013.2287893

Enhanced field emission of rm tio₂ nanowires with uv illumination

Sin Hui Wang, Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Sheng Po Chang, Cheng Liang Hsu

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

TiO₂ nanowires with rutile structures on a SiO₂/ Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 Vμ m under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO₂ band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.

原文	English
文章編號	6670682
頁（從 - 到）	123-125
頁數	3
期刊	IEEE Electron Device Letters
卷	35
發行號	1
DOIs	https://doi.org/10.1109/LED.2013.2287893
出版狀態	Published - 2014 1月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2013.2287893

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abstract = "TiO2 nanowires with rutile structures on a SiO2/ Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 Vμ m under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.",

author = "Wang, {Sin Hui} and Tsai, {Tsung Ying} and Chang, {Shoou Jinn} and Weng, {Wen Yin} and Chang, {Sheng Po} and Hsu, {Cheng Liang}",

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AU - Wang, Sin Hui

AU - Tsai, Tsung Ying

AU - Chang, Shoou Jinn

AU - Weng, Wen Yin

AU - Chang, Sheng Po

AU - Hsu, Cheng Liang

PY - 2014/1

Y1 - 2014/1

N2 - TiO2 nanowires with rutile structures on a SiO2/ Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 Vμ m under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.

AB - TiO2 nanowires with rutile structures on a SiO2/ Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 Vμ m under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.

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Enhanced field emission of rm tio2 nanowires with uv illumination

摘要

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Enhanced field emission of rm tio₂ nanowires with uv illumination