Enhanced field emission of rm tio2 nanowires with uv illumination

Sin Hui Wang, Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Sheng Po Chang, Cheng Liang Hsu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

TiO2 nanowires with rutile structures on a SiO2/ Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 Vμ m under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.

原文English
文章編號6670682
頁(從 - 到)123-125
頁數3
期刊IEEE Electron Device Letters
35
發行號1
DOIs
出版狀態Published - 2014 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Enhanced field emission of rm tio<sub>2</sub> nanowires with uv illumination」主題。共同形成了獨特的指紋。

引用此