Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Yao Ching Tsai, I. Cherng Chen, Ting Jen Hsueh, Cheng Liang Hsu

研究成果: Article

40 引文 (Scopus)

摘要

Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.

原文English
頁(從 - 到)176-179
頁數4
期刊Chemical Physics Letters
490
發行號4-6
DOIs
出版狀態Published - 2010 四月 26

指紋

Field emission
Nanowires
field emission
nanowires
Lighting
illumination
Zinc Oxide
Electrons
Full width at half maximum
zinc oxides
emitters
Current density
Vapors
Electric fields
vapors
current density
catalysts
Glass
Catalysts
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

引用此文

Chen, Chih Han ; Chang, Shoou Jinn ; Chang, Sheng Po ; Tsai, Yao Ching ; Chen, I. Cherng ; Hsueh, Ting Jen ; Hsu, Cheng Liang. / Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV. 於: Chemical Physics Letters. 2010 ; 卷 490, 編號 4-6. 頁 176-179.
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Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV. / Chen, Chih Han; Chang, Shoou Jinn; Chang, Sheng Po; Tsai, Yao Ching; Chen, I. Cherng; Hsueh, Ting Jen; Hsu, Cheng Liang.

於: Chemical Physics Letters, 卷 490, 編號 4-6, 26.04.2010, p. 176-179.

研究成果: Article

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AU - Chang, Sheng Po

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AU - Hsueh, Ting Jen

AU - Hsu, Cheng Liang

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AB - Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.

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