Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature

Yi Hsing Liu; Sheng Joue Young; Liang Wen Ji; Shoou Jinn Chang

doi:10.1109/TED.2014.2362134

Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature

Yi Hsing Liu, Sheng Joue Young, Liang Wen Ji, Shoou Jinn Chang

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/ μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.

原文	English
文章編號	6930807
頁（從 - 到）	4192-4196
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	61
發行號	12
DOIs	https://doi.org/10.1109/TED.2014.2362134
出版狀態	Published - 2014 12月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2014.2362134

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title = "Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature",

abstract = "In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/ μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.",

author = "Liu, {Yi Hsing} and Young, {Sheng Joue} and Ji, {Liang Wen} and Chang, {Shoou Jinn}",

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AU - Liu, Yi Hsing

AU - Young, Sheng Joue

AU - Ji, Liang Wen

AU - Chang, Shoou Jinn

PY - 2014/12/1

Y1 - 2014/12/1

N2 - In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/ μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.

AB - In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/ μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.

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Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature

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